Memory shapes

ABSTRACT

A user definition of a memory shape can be received and a multidimensional, contiguous, physical portion of a memory array can be allocated according to the memory shape. The user definition of the memory shape can include a quantity of contiguous columns of the memory array, a quantity of contiguous rows of the memory array, and a major dimension of the memory shape. The major dimension can correspond to a dimension by which to initially stride data stored in the memory shape.

PRIORITY INFORMATION

This application is a Continuation of U.S. application Ser. No.17/194,020, filed Mar. 5, 2021, which is a Continuation of U.S.application Ser. No. 15/496,886, filed Apr. 25, 2017, which issued asU.S. Pat. No. 10,942,843 on Mar. 9, 2021, the contents of which areincluded herein by reference.

TECHNICAL FIELD

The present disclosure relates generally to semiconductor memory andmethods, and more particularly, to multidimensional, contiguous,physical allocation of a memory device via use of memory shapes.

BACKGROUND

Memory devices are typically provided as internal, semiconductor,integrated circuits in computing systems or other electronic devices.There are many different types of memory including volatile andnon-volatile memory. Volatile memory can require power to maintain itsdata (e.g., user data, error data, etc.) and includes random-accessmemory (RAM), dynamic random access memory (DRAM), and synchronousdynamic random access memory (SDRAM), among others. Non-volatile memorycan provide persistent data by retaining stored data when not poweredand can include non-volatile random access memory (NVRAM), NAND flashmemory, NOR flash memory, read only memory (ROM), Electrically ErasableProgrammable ROM (EEPROM), Erasable Programmable ROM (EPROM), andresistance variable memory such as phase change random access memory(PCRAM), resistive random access memory (RRAM), and magnetoresistiverandom access memory (MRAM), such as spin torque transfer random accessmemory (STT RAM), among others.

Computing systems often include a number of processing resources (e.g.,one or more processors), which may retrieve and execute instructions andstore the results of the executed instructions to a suitable location. Aprocessing resource can comprise a number of functional units (e.g.,herein referred to as functional unit circuitry (FUC)) such asarithmetic logic unit (ALU) circuitry, floating point unit (FPU)circuitry, and/or a combinatorial logic block, for example, which canexecute instructions to perform logical operations such as AND, OR, NOT,NAND, NOR, and XOR logical operations on data (e.g., one or moreoperands).

A number of components in a computing system may be involved inproviding instructions to the functional unit circuitry for execution.The instructions may be generated, for instance, by a processingresource such as a controller and/or host processing resource. Data(e.g., the operands on which the instructions will be executed toperform the logical operations) may be stored in a memory array that isaccessible by the FUC. The instructions and/or data may be retrievedfrom the memory array and sequenced and/or buffered before the FUCbegins to execute instructions on the data. Furthermore, as differenttypes of operations may be executed in one or multiple clock cyclesthrough the FUC, intermediate results of the operations and/or data mayalso be sequenced and/or buffered. In many instances, the processingresources (e.g., processor and/or associated FUC) may be external to thememory array, and data can be accessed (e.g., via a bus between theprocessing resources and the memory array to execute instructions). Datacan be moved from the memory array to registers external to the memoryarray via a bus.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 illustrates a block diagram of an apparatus in the form of acomputing system including at least one memory system in accordance witha number of embodiments of the present disclosure.

FIG. 2 illustrates a schematic diagram of a portion of a memory deviceillustrating a multidimensional, contiguous, physical allocationaccording to a memory shape in accordance with a number of embodimentsof the present disclosure.

FIG. 3 illustrates a schematic diagram of a portion of a memory deviceillustrating a multidimensional, contiguous, physical allocationaccording to a memory shape in accordance with a number of embodimentsof the present disclosure.

FIG. 4 illustrates a schematic diagram of a portion of a memory deviceillustrating a multidimensional, contiguous, physical allocationaccording to a plurality of memory shapes in accordance with a number ofembodiments of the present disclosure.

FIG. 5 illustrates a schematic diagram of a portion of a memory deviceillustrating a multidimensional, contiguous, physical allocationaccording to a plurality of memory shapes for an outer loop optimizationin accordance with a number of embodiments of the present disclosure.

FIG. 6 illustrates a schematic diagram of a portion of a memory deviceillustrating a multidimensional, contiguous, physical allocationaccording to an array of memory shapes for an outer loop optimization inaccordance with a number of embodiments of the present disclosure.

FIG. 7 is a schematic diagram illustrating sensing circuitry inaccordance with a number of embodiments of the present disclosure.

FIG. 8 is a logic table illustrating selectable logic operation resultsimplemented by sensing circuitry in accordance with a number ofembodiments of the present disclosure.

DETAILED DESCRIPTION

In some approaches to allocating memory, operating systems (OSs) mayprovide a method for organizing allocated memory blocks in physicalspace. With respect to this discussion, an “allocated memory block”refers to the location in physical memory where amount of allocatedmemory (e.g., a quantity of bytes) is stored. For example, the calloc( )function allocates a specified number of bytes and initializes them tozero, which assures that all bytes of the allocated memory block havebeen initialized to zero. The calloc( ) function can identify a size inbytes of a single variable and a number of the variables to be allocatedin memory. However, the organization of memory blocks may beone-dimensional (e.g., entirely linear). That is, memory blocks can beorganized such that data is stored to a plurality of memory cellscoupled to contiguous sense lines but a single access line. Aone-dimensional physical memory allocation may support the bandwidth ofa host processor across a diverse set of applications running on thehost. To that end, a one-dimensional physical memory allocation mayincrease memory bandwidth from a host processor. The allocated memoryblocks may be distributed linearly across multiple memory banks ormemory devices (e.g., interleaved across multiple memory banks or memorydevices). Thus, users may be limited to allocating memory blocksaccording to the one-dimensional physical memory allocation. As usedherein, “users” refer to programmers as opposed to an end-user.

Recent advances in memory technology, for example, processing in memory,can benefit from multidimensional allocation of memory. That is, amultidimensional allocation of memory can include a plurality of memorycells coupled to contiguous sense lines and contiguous access lines of asingle memory array. Thus it may be advantageous to allocate physicallycontiguous portions of memory array in multiple dimensions. However, thenotions of multidimensional allocation of memory do not fit currentmodels of one-dimensional memory allocation. If memory is allocatedphysically in one dimension then the performance of a PIM device may bedegraded because of inherent inability to co-locate data elements in thesame physical memory component. Overall system performance may also bedegraded if a virtual memory allocation does not take into accountmultidimensional memory arrangement. For a PIM device to operate on datastored in a memory allocation, the data must be physically organized inthe same physical memory component (e.g., memory bank, memory device,etc.) or be moved to that physical organization before/during theoperation. This can be because of the coupling of the sensing circuitryto the memory array such that data is operated on a column-by-columnbasis. Thus, the physical layout and orientation of individuallyallocated memory blocks may affect the performance of the PIM device.

To overcome limitations on physical organization of data ofone-dimensional memory allocation, the present disclosure is related tostoring data in a multidimensional, contiguous, physical allocation of amemory array. A user-defined multidimensional, contiguous, physicalallocation of memory is herein referred to as a memory shape. Adefinition of the memory shape by a user can include a quantity ofcontiguous columns of the memory array, a quantity of contiguous rows ofthe memory array, and a major dimension of the memory shape. The majordimension, either a horizontal major dimension or a vertical majordimension, can determine the first dimension by which to stride the datastored in the memory shape. Examples of major dimensions are discussedfurther below in association with FIGS. 2 and 3 . A user (e.g.,programmer) can define a memory shape such that the definition of amemory shape is a user definition of a memory shape.

Memory can be allocated to contiguous, physical portions of a memoryarray. Such an allocation is hereinafter referred to as a memory shape.Memory shapes can enable a user (e.g., a programmer) to explicitlydefine the dimensional structure and layout of a target memoryallocation. Memory shapes can be advantageous when the memory isallocated for use by a processing in memory (PIM) device. Co-locatingdata items in a same physical memory component (e.g., memory bank,memory device, etc.) via memory shapes can improve the performance ofthe PIM device and the overall performance of a system comprising thePIM device. Thus, memory shapes can promote a performance-optimizedmemory organization for PIM devices.

A number of embodiments of the present disclosure can promote improveddata locality between data elements and within the data elements bystoring data elements in a memory shape. As used herein, “data element”refers to a group of bits that represents a data value such as aninteger, a floating point, or a string. As used herein, “storing a dataelement in a memory shape” refers to storing the data element in one ormore memory cells coupled to access lines and sense lines of the memoryshape. The definition of a memory shape exceeds that of theone-dimensional physical organization, which only includes the size ofthe memory allocation and the size of the individual data elements ofthe memory allocation. A number of embodiments can include storing morethan one type of data element (e.g., integers, floating points, strings,etc.) in a single memory shape. A multidimensional, contiguous, physicalportion of a memory array can be allocated according to more than onememory shape. Storing data elements in one or more memory shapes canreduce the communication between multiple memory banks or memorydevices. As a result, the bandwidth of a host processor can be increasedbecause the data elements are stored such that the host processor doesnot need to communicate with multiple memory banks or memory devices. Anumber of embodiments can include performing an operation on data storedin a memory shape.

A memory shape can include a number of memory cells to store at leastone entire data element in the memory shape. For example, if a length ofa data element is four bytes of physical memory, then the memory shapecan include a number of memory cells necessary to store the four bytesof the data element. However, the memory shape can include a number ofmemory cells that exceeds that necessary to store the four bytes of thedata element. The major dimension of a memory shape can be aligned withthe length of a data element. For example, if a memory shape includes1024 data elements that are one byte in length, the number of columns ofthe memory shape for a horizontal major dimension or the number of rowsof the memory shape for a vertical major dimension can be multiples ofone byte. An operation can be performed on one or more data element of amemory shape (e.g., performing the operation within the memory shape).An operation can be performed data elements of multiple memory shapes(e.g., performing the operation between the multiple memory shapes).

In the following detailed description of the present disclosure,reference is made to the accompanying drawings that form a part hereof,and in which is shown by way of illustration how a number of embodimentsof the disclosure may be practiced. These embodiments are described insufficient detail to enable those of ordinary skill in the art topractice the embodiments of this disclosure, and it is to be understoodthat other embodiments may be utilized and that process, electrical,and/or structural changes may be made without departing from the scopeof the present disclosure. As used herein, the designators “A”, “B”,“C”, “M”, “N”, “S”, and “X”, particularly with respect to referencenumerals in the drawings, indicates that a number of the particularfeature so designated can be included. As used herein, “a number of” aparticular thing can refer to one or more of such things (e.g., a numberof memory devices can refer to one or more memory devices). As usedherein, the terms “first” and “second” are used to differentiate betweenone feature from another and do not necessarily imply an order betweenthe features so designated.

The figures herein follow a numbering convention in which the firstdigit or digits correspond to the drawing figure number and theremaining digits identify an element or component in the drawing.Similar elements or components between different figures may beidentified by the use of similar digits. For example, 240 may referenceelement “40” in FIG. 2 , and a similar element may be referenced as 340in FIG. 3 . Multiple analogous elements within one figure may bereferenced with a reference numeral followed by a hyphen and anothernumeral or a letter. For example, 240-1 may reference element 40-1 inFIGS. 2 and 240 -X may reference element 40-X, which can be analogous toelement 440-1. Such analogous elements may be generally referencedwithout the hyphen and extra numeral or letter. For example, elements240-1, . . . , 240-X may be generally referenced as 240. As will beappreciated, elements shown in the various embodiments herein can beadded, exchanged, and/or eliminated so as to provide a number ofadditional embodiments of the present disclosure. In addition, as willbe appreciated, the proportion and the relative scale of the elementsprovided in the figures are intended to illustrate certain embodimentsof the present invention, and should not be taken in a limiting sense.

FIG. 1 illustrates a block diagram of an apparatus in the form of acomputing system 100 including at least one memory system 104 inaccordance with a number of embodiments of the present disclosure. Asused herein, a host 102, a memory system 104, a memory device 110, amemory array 111, and/or sensing circuitry 124 might also be separatelyconsidered an “apparatus.”

The computing system 100 can include a host 102 coupled to memory system104, which includes a memory device 110 (e.g., including a memory array111 and/or sensing circuitry 124). The host 102 can be a host systemsuch as a personal laptop computer, a desktop computer, a digitalcamera, a mobile telephone, or a memory card reader, among various othertypes of hosts. In some embodiments, the host 102 can be or include amemory management unit. A memory management unit is a hardware componentthat performs translation between virtual memory addresses and physicalmemory addresses. The host 102 can include a system motherboard and/orbackplane and can include a number of processing resources (e.g., one ormore processors, microprocessors, or some other type of controllingcircuitry). The computing system 100 can include separate integratedcircuits or both the host 102 and the memory system 104 can be on thesame integrated circuit. The computing system 100 can be, for instance,a server system and/or a high performance computing system and/or aportion thereof. Although the example shown in FIG. 1 illustrates asystem having a Von Neumann architecture, embodiments of the presentdisclosure can be implemented in non-Von Neumann architectures (e.g., aTuring machine), which may not include one or more components (e.g.,CPU, ALU, etc.) often associated with a Von Neumann architecture.

For clarity, the computing system 100 has been simplified to focus onfeatures with particular relevance to the present disclosure. The memoryarray 111 can be a hybrid memory cube (HMC), processing in memory randomaccess memory (PIMRAM) array, DRAM array, SRAM array, STT RAM array,PCRAM array, TRAM array, RRAM array, NVRAM array, NAND flash array,and/or NOR flash array, for instance. The memory array 111 can comprisememory cells arranged in rows coupled by access lines (which may bereferred to herein as word lines or select lines) and columns coupled bysense lines (which may be referred to herein as digit lines or datalines). Although a single memory device 110 is shown in FIG. 1 ,embodiments are not so limited. For instance, memory system 104 mayinclude a number of memory devices 110 (e.g., a number of banks of DRAMcells).

The memory device 110 can be a multidimensional random access memory. Adimension of memory is a coordinate that can be used to specify alocation within the memory (e.g., the location of a memory cell orallocable portion of memory). Examples of dimensions of a memory includerows, columns, layers (e.g., in the case of a hybrid memory cube),banks, chips, etc. A memory can have more than three dimensions in termsof coordinates. For example, a memory device 110 can include multiplememory channels (a first dimension of the memory device is a channel),each channel including multiple memory dies (a second dimension of thememory device 110 is a die), each die including multiple subarrays (athird dimension of the memory device 110 is a subarray), and eachsubarray including multiple rows (a fourth dimension of the memory is arow). Some embodiments are described herein with respect to atwo-dimensional memory device for ease of illustration and explanationhowever embodiments are not so limited. One of ordinary skill in theart, having read and understood the present disclosure can apply theteachings to a memory device 110 having more than two dimensions.

The memory system 104 can include address circuitry 126 to latch addresssignals provided over an I/O bus 138 (e.g., a data bus) through I/Ocircuitry 130. Address signals can be received and decoded by a rowdecoder 128 and a column decoder 134 to access the memory device 110.Data can be read from the memory array 111 by sensing voltage and/orcurrent changes on the sense lines using sensing circuitry 124. Thesensing circuitry 124 can read and latch a page (e.g., row) of data fromthe memory array 111. The I/O circuitry 130 can be used forbi-directional data communication with host 102 over the I/O bus 138.The write circuitry 132 can be used to write data to the memory device110.

Controller 108 can decode signals provided by control bus 136 from thehost 102. These signals can include chip enable signals, write enablesignals, and address latch signals that are used to control operationsperformed on the memory device 110, including data read, data write, anddata erase operations. In various embodiments, the controller 108 isresponsible for executing instructions from the host 102. The controller108 can be a state machine, a sequencer, a processor, and/or othercontrol circuitry.

The host 102 can be configured with an operating system “OS” 112. Thehost 102 can be coupled to the memory device 110 (e.g., via the controlbus 136 and/or the I/O bus 138. The OS 112 is executable instructions(software) that manages hardware resources and provides services otherexecutable instructions (programs) that run on the OS 112. The OS 112can include instructions to respond to a received user definition of amemory shape. The user definition of the memory shape can be anallocation of a multidimensional, contiguous, physical portion of amemory array, as described herein. The user definition of the memoryshape can originate from the host 102 (e.g., from a program running onthe host 102) among other originations (e.g., from a direct memoryaccess (DMA) device).

The host 102 can be configured to receive the user definition of amemory shape, receive the user definition of a quantity of the memoryshapes, allocate contiguous columns and contiguous rows of memory cellsof a single physical memory component of the memory device according tothe user definitions, and store a plurality of data elementscontiguously in the single physical memory component of the memorydevice 110 according to the user definitions. The host 102 can beconfigured to allocate the contiguous columns and contiguous rows ofmemory cells of the single physical memory component such that each ofthe memory shapes comprises memory cells coupled to common access lines.The host 102 can be configured to address (e.g., a vector-style address)each memory shape individually such that the operation is performed ondata elements stored in particular memory shape. Although notillustrated in FIG. 1 , the host can include a memory allocationapplication program interface (API) configured to receive the userdefinitions.

An example of the sensing circuitry 124 is described further below inassociation with FIG. 2 . For instance, in a number of embodiments, thesensing circuitry 124 can comprise a number of sense amplifiers and anumber of compute components, which may comprise latch serving as anaccumulator and can be used to perform operations (e.g., on dataassociated with complementary sense lines) such as logical operations.Logical operations can include Boolean operations (e.g., AND, OR, NOR,XOR, etc.) as well as combinations of Boolean operations to performother mathematical operations. In a number of embodiments, the sensingcircuitry 124 can be used to perform logical operations using datastored in the memory array 111 as inputs and store the results of thelogical operations back to the memory array 111 without transferring viaa sense line address access (e.g., without firing a column decodesignal). As such, a logical operation can be performed using sensingcircuitry 124 rather than and/or in addition to being performed byprocessing resources external to the sensing circuitry 124 (e.g., by aprocessor associated with host 102 and/or other processing circuitry,such as ALU circuitry, located on the memory system 104, such as on thecontroller 108, or elsewhere).

In various previous approaches, data associated with a logicaloperation, for instance, would be read from memory via sensing circuitryand provided to an external ALU. The external ALU circuitry wouldperform the logical operations using the elements (which may be referredto as operands or inputs) and the result could be transferred back tothe array via the local I/O lines. In contrast, in a number ofembodiments of the present disclosure, sensing circuitry 124 can beconfigured to perform a logical operation on data stored in memory cellsin memory array 111 and store the result back to the array 111 withoutenabling a local I/O line coupled to the sensing circuitry.

The sensing circuitry 124 can be configured to perform an operation onat least one of the plurality of data elements stored in a memory shape.The sensing circuitry 124 can be configured to perform an operation on afirst data element of a first memory shape and perform an operation on asecond data element of a second memory shape. The sensing circuitry 124can be configured to perform the operation on a first data element and asecond data element of a particular memory shape. The sensing circuitry124 can be configured to perform the operation on the plurality of dataelements concurrently.

As such, in a number of embodiments, registers and/or an ALU external tothe memory array 111 and sensing circuitry 124 may not be needed toperform the logical operation as the sensing circuitry 124 can beoperated to perform the logical operation using the address space ofmemory array 111. Additionally, the logical operation can be performedwithout the use of an external processing resource.

FIG. 2 illustrates a schematic diagram of a portion of a memory device210 illustrating a multidimensional, contiguous, physical allocationaccording to a memory shape 260 in accordance with a number ofembodiments of the present disclosure. The memory device 210 can includea memory array 211 that includes the memory cells 240 (represented bythe filled-in circles) coupled to the rows of access lines 242-1, 242-2,242-3, 242-4, 242-5, 242-6, 242-7, . . . , 242-M and the columns ofsense lines 244-1, 244-2, 244-3, 244-4, 244-5, 244-6, 244-7, 244-8, . .. , 244-N. The memory array 211 is not limited to a particular number ofaccess lines and/or sense lines, and use of the terms “rows” and“columns” does not intend a particular physical structure and/ororientation of the access lines and/or sense lines. Although notpictured, each column of memory cells can be associated with acorresponding pair of complementary sense lines. An example where eachcolumn of memory cells is associated with a corresponding pair ofcomplementary sense lines is discussed further below in association withFIG. 7 .

The memory shape 260 is denoted by a box encompassing a group of thememory cells 240 coupled to the access lines 242-1 to 242-6 and thesense lines 244-1 to 244-6. That is, the memory shape 260 is a 6×6memory shape comprising six adjacent rows of the memory cells 240 andsix adjacent columns of the memory cells 240. As used herein, “a row ofmemory cells” may refer to a subset of the memory cells coupled to anaccess line and “a column of memory cells” may refer to a subset of thememory cells coupled to a sense line. The major dimension of the memoryshape 260 is a vertical major dimension as indicated by the arrow 261.Because the major dimension is a vertical major dimension, the stridewithin the memory shape 260 can begin with transferring data to or fromthe memory cell 240-1, then transferring data to or from the memory cell240-2, and so on such that data is transferred to or from the memorycells 240-1 to 240-6 coupled to the sense line 244-1 before data istransferred to or from the memory cells coupled to the sense line 244-2beginning with the memory cell 240-7.

An example of pseudo code for defining a memory shape as a programminglanguage data structure (e.g., a C struct) can be summarized as follows:

//- shape structure struct_mcs_shape_t{  unsigned _rows; //- quantity ofcontiguous rows  unsigned _cols; //- quantity of contiguous coluimns unsigned _major; //- 0x00 indicates a vertical major dimension //- 0x01indicates a horizontal major dimension }An example of pseudo code of a program function (e.g., a macro) forusers (e.g., programmers) to allocate a multidimensional, contiguous,physical portion of a memory array according to a memory shape, asdefined above, as follows:

//- shape macro #define MAJOR_VERTICAL 0x00 #define MAJOR_HORIZONTAL0x01 #define _shape( NAME, R, C, M)  \  { struct _mcs_shape_t NAME ={._rows = R, \  ._cols = C, ._major = M}; }For example, a user can allocate a multidimensional, contiguous,physical portion of the memory array 211 according to the memory shape260 via the program function “shape” described above:

-   -   _shape (MY_SHAPE, 6, 6, MAJOR_VERTICAL)

A data element can be stored in the memory cells corresponding to eachof the contiguous columns of the memory shape 260. For example, a dataelement can be stored in the memory cells 240-1 to 240-6, whichcorrespond to the first column of the memory shape 260. The data elementcan be one of several types of data elements including but not limitedto an integer, a floating point, or a string. Another data element, ofthe same type as or a different type than the data element stored in thefirst column, can be stored in a group of the memory cells 240 coupledto the sense line 244-2 and the access lines 242-1 to 242-6corresponding to the second column of the memory shape 260.

Another data element of the same length as or a different length thanthe data element stored in the first column of the memory shape 260 canbe stored in the second column of the memory shape 260. For example, afirst data element can be stored in six of the memory cells 240 coupledto the access lines 242-1 to 242-6 and the sense line 244-1 of the firstcolumn of the memory shape 260. A second data element can be stored infour of the memory cells 240 coupled to the access lines 242-1 to 242-4and the sense line 244-2 of the second column of the memory shape 260.

In at least one embodiment padding can be stored in memory cells of amemory shape when a data element of a length less than the length of themajor dimension of the memory shape is stored in the memory shape. Asused herein, “padding” refers to bits stored in memory cells of a memoryshape that are not storing bits of a data element. For example, if adata element is stored in the memory cells 240-1 to 240-4 of the memoryshape 260, then padding can be stored in the memory cells 240-5 and240-6 of the memory shape 260. The length of the padding (e.g., thequantity of bits) can be equal to the difference of the length of thefirst data element and the length of the second data element.

Each column of memory cells can be coupled to sensing circuitry 224,which can be analogous to sensing circuitry 124 illustrated in FIG. 1 .In this example, the sensing circuitry includes a number of senseamplifiers 246-1, 246-2, 246-3, 246-4, 246-5, 246-6, 246-7, 246-8, . . ., 246-N coupled to the respective sense lines 244. The sense amplifiers246 are coupled to input/output (I/O) line 254 (e.g., a local I/O line)via access devices (e.g., transistors) 250-1, 250-2, 250-3, 250-4,250-5, 250-6, 250-7, 250-8, . . . , 250-N. In this example, the sensingcircuitry 224 also includes a number of compute components 248-1, 248-2,248-3, 248-4, 248-5, 248-6, 248-7, 248-8, . . . , 248-N coupled to therespective sense lines 244. Column decode lines 252-1, 252-2, 252-3,252-4, 252-5, 252-6, 252-7, 252-8, . . . , 252-N are coupled to thegates of transistors 250 respectively, and can be selectively activatedto transfer data sensed by respective sense amps 246 and/or stored inrespective compute components 248 to a secondary sense amplifier 256. Ina number of embodiments, the compute components 248 can be formed onpitch with the memory cells of their corresponding columns and/or withthe corresponding sense amplifiers 246.

In a number of embodiments, the sensing circuitry (e.g., computecomponents 248 and sense amplifiers 246) is configured to perform anumber of operations (e.g., logical operations) on data stored in thememory array 211. As an example, a first data element can be stored in afirst group of memory cells coupled to a particular access line (e.g.,access line 242-1) and to a number of sense lines 244, and a second dataelement can be stored in a second group of memory cells coupled to adifferent access line (e.g., access line 242-2) and the respectivenumber of sense lines 244. Each memory cell 240 can store a bit of thefirst data element or the second data element. For example, each bit ofthe first data element can have a logical operation performed thereonwith a respective bit of the second data element. The result of thelogical operation can be stored (e.g., as a bit-vector) in a third groupof memory cells coupled to a particular access line (e.g., access line242-3) and to the number of sense lines 244.

A number of embodiments can include a memory array 211 including many(e.g., thousands) of the sense lines 244. According to the presentdisclosure, a logical operation can be performed on the many memoryelements associated with the many (e.g., thousands) of the sense lines244 in parallel in memory (e.g., without transferring the data out ofthe array, such as to a processing resource). Such embodiments can savea significant amount of time that would otherwise be required if thedata was transferred to a processing resource to perform the logicaloperations (e.g., at 64 bits per clock cycle). Further advantages can berealized by allocating a multidimensional, contiguous, physical portionof a memory array before the logical operation is performed so thatthere is no stall in the performance of the logical operation in memoryin order to align data and/or allocate a temporary allocable portion ofmemory (e.g., allocate a temporary row of memory).

FIG. 3 illustrates a schematic diagram of a portion of a memory device310 illustrating a multidimensional, contiguous, physical allocationaccording to a memory shape 362 in accordance with a number ofembodiments of the present disclosure. The portion of the memory device310 can be analogous to the portion of the memory device 210 illustratedin FIG. 2 . The memory shape 362 is denoted by a box encompassing agroup of the memory cells 340 (represented by the filled-in circles)coupled to the access lines 342-1 to 342-6 and the sense lines 344-1 to344-6. That is, the memory shape 362 is a 6×6 memory shape comprisingsix contiguous rows of the memory cells 340 and six contiguous columnsof the memory cells 340. The major dimension of the memory shape 362 isa horizontal major dimension as indicated by the arrow 363. Because themajor dimension is a horizontal major dimension, the stride within thememory shape can begin with transferring data to or from the memory cell340-1, then transferring data to or from the memory cell 340-2, and soon such that data is transferred to or from the memory cells 340-1 to340-6 coupled to the access line 342-1 before data is transferred to orfrom the memory cells coupled to the access line 342-2 beginning withthe memory cell 340-7.

For example, a user can allocate a multidimensional, contiguous,physical portion of the memory array 311 according to the memory shape362 via the program function “shape” described above:

-   -   _shape (MY_SHAPE, 6, 6, MAJOR_HORIZONTAL)

A data element can be stored in the memory cells corresponding to eachof the contiguous rows of the memory shape 362. For example, a dataelement can be stored in the memory cells 340-1 to 340-6, whichcorrespond to the first row of the memory shape 362. The data elementcan be one of several types of data elements including but not limitedto an integer, a floating point, or a string. Another data element, ofthe same type as or a different type than the data element stored in thefirst column, can be stored in a group of the memory cells 340 coupledto the access line 342-2 and the sense lines 344-1 to 344-6corresponding to the second column of the memory shape 362.

FIG. 4 illustrates a schematic diagram of a portion of a memory deviceillustrating a multidimensional, contiguous, physical allocationaccording to a plurality of memory shapes 464-1 to 464-3 in accordancewith a number of embodiments of the present disclosure. The portion ofthe memory device 410 can be analogous to the portion of the memorydevice 210 illustrated in FIG. 2 . The plurality of memory shapes 464-1to 464-3 are contiguous as denoted by the boxes encompassing groups ofthe memory cells (represented by the filled-in circles) coupled to theaccess lines 442-1 to 442-6 and the sense lines 444-1 to 444-9. That is,each of the plurality of memory shapes 464-1 to 464-3 is a 6×3 memoryshape comprising six contiguous rows of the memory cells and threecontiguous columns of the memory cells such that the memory shape 464-1includes the memory cells coupled to the access lines 442-1 to 442-6 andthe sense lines 444-1 to 444-3, the memory shape 464-2 includes thememory cells coupled to the access lines 442-1 to 442-6 and the senselines 444-4 to 444-6, and the memory shape 464-3 includes the memorycells coupled to the access lines 442-1 to 442-6 and the sense lines444-7 to 444-9. The major dimension of each of the plurality of memoryshapes 464-1 to 464-3 is a vertical major dimension as indicated by thearrows 461-1 to 461-3.

The memory shape to memory shape stride from one memory shape (e.g., thememory shape 464-1) to another memory shape (e.g., the memory shape464-2) can be horizontal as indicated by the arrow 465. Although theplurality of memory shapes can have a vertical memory shape to memoryshape stride such that the plurality of memory shapes are verticallyadjacent, a horizontal memory shape to memory shape stride such that theplurality of memory shapes are horizontally adjacent can overcome thephysical constraints of a memory array. One such physical constraint canbe that the quantity of access lines (e.g., the quantity of rows ofmemory cells) is less than the quantity of sense lines (e.g., thequantity of columns of memory cells). For example, a memory array mayhave 512 or 1024 access lines but have thousands of the sense lines 444.In previous approaches, data elements may be wrapped such that a dataelement begins in one column, or row, and ends in a different column, orrow. Some columns may be masked because data elements may not be storedin adjacent columns in contrast to at least one embodiment in accordancewith the present disclosure. That is, masking may not be necessary toexclude undesired data from being operated on because the data elementsare stored in adjacent columns or rows.

A plurality of memory shapes with a vertical major dimension can improvethe overall performance of a system, such as the system 100 illustratedin FIG. 1 . By storing a data element in each column of a memory shape,the sensing circuitry, such as the sensing circuitry 424, can be usedefficiently such that communication between the physical memorycomponents (e.g., memory device, memory bank, etc.) of a memory deviceis decreased. Additionally, throughput of a single physical memorycomponent can be increased because a greater portion of the availablesensing circuitry is utilized. That is, storing a data element in eachcolumn of a memory shape spreads the data elements amongst the senseamplifiers and compute components.

In at least one embodiment, string-type data elements, such as characterstrings, can be stored in a memory shape. Each of the character stringscan comprise characters. A character can be a predefined programminglanguage data structure comprising a byte of data (eight bits of data).For example, a character string can comprise two characters or sixteenbits of data. A multidimensional, contiguous, physical portion of amemory array can be allocated according to a memory shape such that thememory shape includes four of the character strings. If the memory shapehas a vertical major dimension, then each of the four character stringscan be stored in a column of the memory shape. Thus, four contiguouscolumns and sixteen contiguous rows of a memory array can be assigned toa 16×4 memory shape. The allocation can enable an operation to beperformed on the four data elements of each memory shape concurrently ina single instruction, multiple data (SIMD) fashion. If the allocationincludes more than one of the memory shapes, then the operation can beperformed on the four data elements of all of the memory shapesconcurrently. The following pseudo code can be used to define the fourdata elements, each comprising two characters:

struct data{  char sentence[4][2]; //-- four character strings, eachcomprising //-- two characters };The pseudo code program function “shape” described above in associationwith FIG. 2 can be used to allocate a multidimensional, contiguous,physical portion of a memory array according to a 16×4 memory shape asfollows:

-   -   _shape(MY_SHAPE, 16, 4, MAJOR_VERTICAL);

A multidimensional, contiguous, physical portion of a memory array canbe allocated according to a plurality of memory shapes, such as theplurality of memory shapes 464-1 to 464-3 illustrated in FIG. 4 .Different methods can be utilized to allocate the multidimensional,contiguous, physical portion of a memory array according to theplurality of memory shapes. A first method can include mapping existingdata to the plurality of memory shapes. The existing data can be mappedfrom a different physical memory component of a single memory device, adisk external to the memory device, or the same memory array that willstore the mapped data elements. The first method can utilize a memoryallocation API to allocate a plurality of memory shapes. An example ofpseudo code for allocating a multidimensional, contiguous, physicalportion of a memory array according to a plurality of memory shapes canbe summarized as follows:

-   -   void*mcs_shape_mmap(size_t nmemb, mcs_shape_t shape);        where “nmemb” is the quantity of a previously defined memory        shape. For example, three of the memory shape “MY_SHAPE” as        defined above can be assigned to a pointer of a particular type        using the pseudo code as follows:    -   struct data*mydataptr=mcs_shape_mmap(3, MY_SHAPE);

A second method can include allocating contiguous rows and contiguouscolumns of a physical memory component of a memory array in which datawill be stored. The second method can be referred to as user-spaceaccommodations. In contrast to the first method where existing data ismapped to the plurality of memory shapes, the second method allocatesthe memory shapes for future use. The second method can includeallocating three of the memory shape “MY_SHAPE” as defined above usingthe pseudo code as follows:

-   -   struct data*mydata=NULL;    -   mydata=mcs_calloc_shape(3, sizeof(struct data), MY_SHAPE);

At least one embodiment in accordance with the present disclosure can beused in conjunction with a database, such as that used for medicalrecords, because memory shapes can provide the ability to perform anoperation on a particular data element of a memory shape, which cancorrespond to a particular field of the database. For example, a dataelement corresponding to each field of a medical records database can bestored in each column of a memory shape. Each of a plurality of memoryshapes can correspond to a patient's records. For example, a firststring-type data element corresponding to a patient's last name can bestored in the respective first column of the memory shape. A secondstring-type data element corresponding to the patient's first name canbe stored in the respective second column of the memory shape. A firstinteger-type data element corresponding to the patient's zip code can bestored in the respective third column of the memory shape. A secondinteger-type data element corresponding to the patient's phone numbercan be stored in the respective fourth column of the memory shape. If,for example, the medical records for only those patients living in aparticular zip code are needed, then an operation can be performed onthe data elements stored in the respective third columns of theplurality of memory shapes.

FIG. 5 illustrates a schematic diagram of a portion of a memory deviceillustrating a multidimensional, contiguous, physical allocationaccording to a plurality of memory shapes for an outer loop optimizationin accordance with a number of embodiments of the present disclosure.The outer loop optimization can include performing an operation on thedata elements of the plurality of memory shapes according to auser-defined sequence. The user-defined sequence can indicate which dataelements on which to perform the operation. The user-defined sequencecan indicate a subset of the plurality of memory shapes and a subset ofthe contiguous columns or the contiguous rows of the plurality of memoryshapes.

At least one embodiment can include receiving a user-defined quantity ofcontiguous rows of a memory shape and a user-defined quantity ofcontiguous columns of the memory shape, receiving a user-definedquantity of memory shapes, allocating a contiguous, multidimensionalportion of a single physical memory component of a memory deviceaccording to the user-defined quantities, storing a plurality of dataelements in the contiguous, multidimensional portion such that theplurality of data elements are in a common orientation, and performingan operation on each of the plurality of data elements according to auser-defined sequence. The user-defined sequence can include performingthe operation on each of the plurality of data elements of a firstmemory shape and subsequently performing the operation on each of theplurality of data elements of a second memory shape.

The plurality of data elements can be oriented vertically such that oneof the plurality of data elements can be stored in each of thecontiguous columns as illustrated in FIG. 5 . The user-defined sequencecan include performing the operation on a first data element of arespective first column of the first memory shape, subsequentlyperforming the operation on a second data element of a respective secondcolumn of the respective first memory shape, subsequently performing theoperation on a third data element of a respective first column of thesecond memory shape, and subsequently performing the operation on afourth data element of a respective second column of the second memoryshape. The respective first column of a memory shape can be adjacent tothe respective second column of the memory shape.

The plurality of data elements can be oriented horizontally such thatone of the plurality of data elements can be stored in each of thecontiguous rows as illustrated in FIG. 6 . The user-defined sequence caninclude performing the operation on a first data element of a respectivefirst row of the first memory shape, subsequently performing theoperation on a second data element of a respective second row of therespective first memory shape, subsequently performing the operation ona third data element of a respective first row of the second memoryshape, and subsequently performing the operation on a fourth dataelement of a respective second row of the second memory shape. Therespective first row of a memory shape can be adjacent to the respectivesecond row of the memory shape.

FIG. 5 illustrates three memory shapes 564-1 to 564-3, which can beanalogous to the plurality of the memory shapes 464-1 to 464-3illustrated in FIG. 4 . Each of the memory shapes 564-1 to 564-3 has avertical major dimension as indicated by the arrows 561-1 to 561-3. Afirst index (e.g., “i”) can correspond to a particular one of the memoryshapes 564-1 to 564-3. For example, i=0 can correspond to the memoryshape 564-1, i=1 can correspond to the memory shape 564-2, and i=2 cancorrespond to the memory shape 564-3. A second index (e.g., “j”) cancorrespond to a particular sentence of the memory shapes 564-1 to 564-3.As used herein, a “sentence” refers to a column of a memory shape if thememory shape has a vertical major dimension or a row of a memory shapeif the memory shape has a horizontal major dimension. As illustrated inFIG. 5 , j=0 can correspond to a respective first column of the memoryshape 564-1 (e.g, for i=0, the memory cells (represented by thefilled-in circles) coupled to the sense line 544-1 and the access lines542-1 to 542-6), j=1 can correspond to a respective second column of thememory shape 564-1 (e.g, for i=0, the memory cells coupled to the senseline 544-2 and the access lines 542-1 to 542-6), and j=2 can correspondto a respective third column of the memory shape 564-1 (e.g, for i=0,the memory cells coupled to the sense line 544-3 and the access lines542-1 to 542-6). A data element can be stored in each column of a memoryshape.

By using the first and second indices i and j, an operation can beperformed on each data element stored in the columns of a first memoryshape (e.g., the memory shape 564-1) before the operation is performedon each data element stored in the columns of a second memory shape(e.g., the memory shape 564-2). Alternatively, the first and secondindices i and j can be used to perform an operation on a subset of thememory shapes, a subset of the data elements stored in the memoryshapes, or both. Thus, each memory shape can be addressed individuallysuch that the operation is performed on a group of the data elements ofa particular memory shape of the plurality of memory shapes. The addresscan be a vector-style address that includes a starting address and anending address. The vector-style address can include a starting addressand an offset.

A user can use loop constructs that can be interpreted by a compiler togenerate a single SIMD operation for an outer loop optimization. Byusing multidimensional, contiguous, physical allocation via memoryshapes, a compiler can perform transformations and optimizations on codethat would otherwise be difficult or unsafe despite the explicitdefinitions of stride and addressing of the compiler.

An example of pseudo code for an outer loop optimization can besummarized as follows:

int i, j; for( i=0; i<2; i++ ){ //-- for each memory shape  for( j=0;j<2; j++ ){ //-- for each sentence of a memory shape   //-- perform anoperation on mydata[i].sentence[j]  } }According to the user-defined sequence of the example pseudo code above,an operation is performed on each data element, corresponding to eachsentence j=0 through j=2, of a first memory shape (e.g., the memoryshape 564-1), then on each data element, corresponding to each sentencej=0 through j=2, of a second memory shape (e.g., the memory shape564-2), and then on each data element, corresponding to each sentencej=0 through j=2, of a third memory shape (e.g., the memory shape 564-3).The above pseudo code can used with a plurality of memory shapes thathave a vertical major dimension as illustrated in FIG. 5 or a horizontalmajor dimension as illustrated in FIG. 6 .

FIG. 6 illustrates a schematic diagram of a portion of a memory deviceillustrating a multidimensional, contiguous, physical allocationaccording to a plurality of memory shapes for an outer loop optimizationin accordance with a number of embodiments of the present disclosure.FIG. 6 illustrates three memory shapes 666-1 to 666-3, which can beanalogous to the plurality of the memory shapes 464-1 to 464-3illustrated in FIG. 4 except each of the memory shapes 666-1 to 666-3has a horizontal major dimension as indicated by the arrows 666-1 to666-3. A first index (e.g., “i”) can correspond to a particular one ofthe memory shapes 666-1 to 666-3. For example, i=0 can correspond to thememory shape 666-1, i=1 can correspond to the memory shape 666-2, andi=2 can correspond to the memory shape 666-3. A second index (e.g., “j”)can correspond to a particular sentence of the memory shapes 666-1 to666-3. As illustrated in FIG. 6 , j=0 can correspond to a respectivefirst row of the memory shape 666-1 (e.g, for i=0, the memory cells(represented by the filled-in circles) coupled to the access line 642-1and the sense lines 644-1 to 644-3), j=1 can correspond to a respectivesecond row of the memory shape 666-1 (e.g, for i=0, the memory cellscoupled to the access line 642-2 and the sense lines 644-1 to 644-3),j=2 can correspond to a respective third row of the memory shape 666-1(e.g, for i=0, the memory cells coupled to the access line 642-3 and thesense lines 644-1 to 644-3), j=3 can correspond to a respective fourthcolumn of the memory shape 666-1 (e.g, for i=0, the memory cells coupledto the access line 642-4 and the sense lines 644-1 to 644-3), j=4 cancorrespond to a respective fifth column of the memory shape 666-1 (e.g,for i=0, the memory cells coupled to the access line 642-5 and the senselines 644-1 to 644-3), and j=5 can correspond to a respective sixthcolumn of the memory shape 666-1 (e.g, for i=0, the memory cells coupledto the access line 642-6 and the sense lines 644-1 to 644-3). A dataelement can be stored in each row of a memory shape.

By using the first and second indices i and j, an operation can beperformed on each data element stored in the rows of a first memoryshape (e.g., the memory shape 666-1) before the operation is performedon each data element stored in the rows of a second memory shape (e.g.,the memory shape 666-2). Alternatively, the first and second indices iand j can be used to perform an operation on a subset of the memoryshapes, a subset of the data elements stored in the memory shapes, orboth. Thus, each memory shape can be addressed individually such thatthe operation is performed on a group of the data elements of aparticular memory shape of the plurality of memory shapes. The addresscan be a vector-style address that includes a starting address and anending address. The vector-style address can include a starting addressand a stride.

FIG. 7 is a schematic diagram illustrating sensing circuitry 724 inaccordance with a number of embodiments of the present disclosure. Thesensing circuitry 724 can be analogous to the sensing circuitry 124illustrated in FIG. 1 . The sensing circuitry 724 can include a senseamplifier 746, which can be analogous to any of the sense amplifiers 246illustrated in FIG. 2 , and a compute component 748, which can beanalogous to any of the compute components 248 illustrated in FIG. 2 .FIG. 7 shows a sense amplifier 746 coupled to a pair of complementarysense lines 742 a and 742 b (which as a pair can be analogous to any ofthe sense lines 242 illustrated in FIG. 2 ). The compute component 748is coupled to the sense amplifier 746 via the pass transistors 770-1 and770-2. The gates of the pass transistors 770-1 and 770-2 can becontrolled by a logical operation selection logic signal, PASS, whichcan be output from logical operation selection logic 772. FIG. 7 showsthe compute component 748 labeled “A” and the sense amplifier 746labeled “B” to indicate that the data value stored in the computecomponent 748 is the “A” data value and the data value stored in thesense amplifier 746 is the “B” data value shown in the logic tablesillustrated with respect to FIG. 8 .

The selectable logical operation selection logic 772 includes the swaptransistors 776, as well as logic to drive the swap transistors 776. Thelogical operation selection logic 772 includes four logic selectiontransistors: a logic selection transistor 790 coupled between the gatesof the swap transistors 776 and a TF signal control line, a logicselection transistor 792 coupled between the gates of the passtransistors 770-1 and 770-2 and a TT signal control line, a logicselection transistor 794 coupled between the gates of the passtransistors 770-1 and 770-2 and a FT signal control line, and a logicselection transistor 796 coupled between the gates of the swaptransistors 776 and a FF signal control line. Gates of the logicselection transistors 790 and 792 are coupled to the true digit line 742a through isolation transistor 774-1 (having a gate coupled to an ISOsignal control line). Gates of the logic selection transistors 794 and796 are coupled to the complementary digit line 742 b through theisolation transistor 774-2 (also having a gate coupled to an ISO signalcontrol line).

As illustrated in FIG. 7 , logic selection control signals can beapplied to the logic selection transistors 790, 792, 794, and 796 toperform a particular logical operation. Operation of the logic selectiontransistors 790 and 796 are based on the state of the TF and FFselection signals and the data values on the respective complementarydigit lines at the time the ISO signal is activated/deactivated. Thelogic selection transistors 790 and 796 also operate in a manner tocontrol the swap transistors 776. For instance, to OPEN (e.g., turn on)the swap transistors 776, either the TF control signal is activated(e.g., high) with data value on the true digit line 742 a being “1,” orthe FF control signal is activated (e.g., high) with the data value onthe complement digit line 742 b being “1.” If either the respectivecontrol signal or the data value on the corresponding digit line (e.g.,the digit line to which the gate of the particular logic selectiontransistor is coupled) is not high, then the swap transistors 776 willnot be OPENed despite conduction of a particular logic selectiontransistor 790 and 796.

The PASS* control signal is not necessarily complementary to the PASScontrol signal. It is possible for the PASS and PASS* control signals toboth be activated or both be deactivated at the same time. However,activation of both the PASS and PASS* control signals at the same timeshorts the pair of complementary digit lines 742 a and 742 b together.Logical operations results for the sensing circuitry illustrated in FIG.7 are summarized in the logic table illustrated in FIG. 8 .

The sense amplifier 746 can, in conjunction with the compute component748, be operated to perform various logical operations using data froman array as an input. In a number of embodiments, the result of alogical operation can be stored back to the array without transferringthe data via a digit line address access (e.g., without firing a columndecode signal such that data is transferred to circuitry external fromthe array and sensing circuitry via local I/O lines). As such, a numberof embodiments of the present disclosure can enable performing logicaloperations and compute functions associated therewith using less powerthan various previous approaches. Additionally, since a number ofembodiments can eliminate the need to transfer data across I/O lines inorder to perform compute functions (e.g., between memory and discreteprocessor), a number of embodiments can enable an increased parallelprocessing capability as compared to previous approaches.

The sense amplifier 746 can further include equilibration circuitry,which can be configured to equilibrate the pair of complementary digitlines 742 a and 742 b. In this example, the equilibration circuitrycomprises a transistor coupled between the pair of complementary digitlines 742 a and 742 b. The equilibration circuitry also comprisestransistors each having a first source/drain region coupled to anequilibration voltage (e.g., V_(DD)/2), where V_(DD) is a supply voltageassociated with the array. A second source/drain region of a transistorcan be coupled to the digit line 742 a, and a second source/drain regionof a transistor can be coupled to the digit line 742 b. Gates of thetransistors can be coupled together, and to an equilibration (EQ)control signal line. As such, activating EQ enables the transistors,which effectively shorts the pair of complementary digit lines 742 a and742 b together and to the equilibration voltage (e.g., V_(DD)/2).

Although FIG. 5 shows the sense amplifier 746 comprising theequilibration circuitry, embodiments are not so limited, and theequilibration circuitry may be implemented discretely from the senseamplifier 746, implemented in a different configuration than that shownin FIG. 7 , or not implemented at all.

As shown in FIG. 7 , the compute component 748 can also comprise a latch791. The latch 791 can include a pair of cross coupled p-channeltransistors (e.g., PMOS transistors) having their respective sourcescoupled to a supply voltage (e.g., V_(DD)). The latch 791 can include apair of cross coupled n-channel transistors (e.g., NMOS transistors)having their respective sources selectively coupled to a referencevoltage (e.g., ground), such that the latch 791 is continuously enabled.The configuration of the compute component 748 is not limited to thatshown in FIG. 7 .

FIG. 8 is a logic table illustrating selectable logic operation resultsimplemented by sensing circuitry (e.g., the sensing circuitry 724 shownin FIG. 7 ) in accordance with a number of embodiments of the presentdisclosure. The four logic selection control signals (e.g., TF, TT, FT,and FF), in conjunction with a particular data value present on thecomplementary digit lines (e.g., the pair of complementary digit lines742 a and 742 b shown in FIG. 7 ), can be used to select one of aplurality of logical operations to implement involving the starting datavalues stored in the sense amplifier 746 and the compute component 748.The four logic selection control signals (e.g., TF, TT, FT, and FF), inconjunction with a particular data value present on the complementarydigit lines (e.g., on nodes S and S*), controls the pass transistors770-1 and 770-2 and swap transistors 776, which in turn affects the datavalue in the compute component 748 and/or the sense amplifier 746before/after firing. The capability to selectably control the swaptransistors 776 facilitates implementing logical operations involvinginverse data values (e.g., inverse operands and/or inverse result),among others.

Logic Table 8-1 illustrated in FIG. 8 shows the starting data valuestored in the compute component 748 shown in column A at 871, and thestarting data value stored in the sense amplifier 746 shown in column Bat 873. The other three column headings in Logic Table 8-1 refer to thestate of the pass transistors 770-1 and 770-2 and the swap transistors776, which can respectively be controlled to be OPEN or CLOSED dependingon the state of the four logic selection control signals (e.g., TF, TT,FT, and FF), in conjunction with a particular data value present on thepair of complementary digit lines 742 a and 742 b when the ISO controlsignal is asserted. The “NOT OPEN” column 875 corresponds to the passtransistors 770-1 and 770-2 and the swap transistors 776 both being in anon-conducting condition. The “OPEN TRUE” column 877 corresponds to thepass transistors 770-1 and 770-2 being in a conducting condition. The“OPEN INVERT” column 879 corresponds to the swap transistors 776 beingin a conducting condition. The configuration corresponding to the passtransistors 770-1 and 770-2 and the swap transistors 776 both being in aconducting condition is not reflected in Logic Table 8-1 since thisresults in the digit lines being shorted together.

Via selective control of the pass transistors 770-1 and 770-2 and theswap transistors 776, each of the three columns 875, 877, and 879 of theupper portion of Logic Table 8-1 can be combined with each of the threecolumns 875, 877, and 879 of the lower portion of Logic Table 8-1 toprovide nine (e.g., 3×3) different result combinations, corresponding tonine different logical operations, as indicated by the variousconnecting paths shown at 881. The nine different selectable logicaloperations that can be implemented by the sensing circuitry 724 aresummarized in Logic Table 8-2.

The columns of Logic Table 8-2 show a heading 883 that includes thestates of logic selection control signals (e.g., FF, FT, TF, TT). Forexample, the state of a first logic selection control signal (e.g., FF)is provided in the row 884, the state of a second logic selectioncontrol signal (e.g., FT) is provided in the row 885, the state of athird logic selection control signal (e.g., TF) is provided in the row886, and the state of a fourth logic selection control signal (e.g., TT)is provided in the row 887. The particular logical operationcorresponding to the results is summarized in the row 888.

It will be understood that when an element is referred to as being “on,”“connected to” or “coupled with” another element, it can be directly on,connected, or coupled with the other element or intervening elements maybe present. In contrast, when an element is referred to as being“directly on,” “directly connected to” or “directly coupled with”another element, there are no intervening elements or layers present.

Although specific embodiments have been illustrated and describedherein, those of ordinary skill in the art will appreciate that anarrangement calculated to achieve the same results can be substitutedfor the specific embodiments shown. This disclosure is intended to coveradaptations or variations of one or more embodiments of the presentdisclosure. It is to be understood that the above description has beenmade in an illustrative fashion, and not a restrictive one. Combinationof the above embodiments, and other embodiments not specificallydescribed herein will be apparent to those of skill in the art uponreviewing the above description. The scope of the one or moreembodiments of the present disclosure includes other applications inwhich the above structures and methods are used. Therefore, the scope ofone or more embodiments of the present disclosure should be determinedwith reference to the appended claims, along with the full range ofequivalents to which such claims are entitled.

In the foregoing Detailed Description, some features are groupedtogether in a single embodiment for the purpose of streamlining thedisclosure. This method of disclosure is not to be interpreted asreflecting an intention that the disclosed embodiments of the presentdisclosure have to use more features than are expressly recited in eachclaim. Rather, as the following claims reflect, inventive subject matterlies in less than all features of a single disclosed embodiment. Thus,the following claims are hereby incorporated into the DetailedDescription, with each claim standing on its own as a separateembodiment.

What is claimed is:
 1. A method, comprising: receiving, by a host coupled to a memory system, a user definition of a memory shape indicative of: a quantity of contiguous columns of a memory device of the memory system; a quantity of contiguous rows of the memory device; and a major dimension of the memory shape corresponding to a dimension of the memory shape by which data is written to the contiguous columns and contiguous rows; allocating, by the host, a multidimensional, physical portion of the memory device according to the user definition; storing, by the memory system, only a first data element in a first column of memory cells or a first row of memory cells of the allocated multidimensional, physical portion of the memory device; responsive to storing the first data element in the first column of memory cells, storing, by the memory system, only a second data element in a second column of memory cells of the allocated multidimensional, physical portion of the memory device that is directly adjacent to the first column of memory cells; and responsive to storing the first data element in the first row of memory cells, storing, by the memory system, only the second data element in a second row of memory cells of the allocated multidimensional, physical portion of the memory device that is directly adjacent to the first row of memory cells.
 2. The method of claim 1, further comprising performing an operation on the first data element or the second data element using sensing circuitry of the memory device.
 3. The method of claim 1, wherein allocating the multidimensional, physical portion comprises allocating the multidimensional, physical portion of a single physical memory component of the memory device.
 4. The method of claim 1, wherein the first data element is of a first type, the second data element is of a second type that is different than the first type.
 5. The method of claim 4, wherein the first type is an integer and the second type is a floating point or a string.
 6. The method of claim 8, wherein the first type is a string and the second type is a floating point or an integer.
 7. A method, comprising: allocating, by a host, physically contiguous columns of memory cells and physically contiguous rows of memory cells of a memory array of a memory device coupled to the host according to: a first user definition specifying a major dimension of the memory shape by which data is written to the memory shape; and a second user definition specifying a plurality of the memory shape; storing, by the memory device, only a respective first data element in a first one of the physically contiguous columns of memory cells or a first of the contiguous rows of memory cells corresponding to each respective one of the memory shapes; responsive to storing the respective first data element in the first one of the physically contiguous columns of memory cells, storing, by the memory device, only a respective second data element in a second one of the physically contiguous columns of memory cells that is adjacent to the first one of the physically contiguous columns of memory cells; and responsive to storing the respective first data element in the first one of the physically contiguous rows of memory cells, storing, by the memory device, only the respective second data element in a second one of the physically contiguous rows of memory cells that is adjacent to the first one of the physically contiguous rows of memory cells.
 8. The method of claim 7, further comprising mapping existing data to the memory shapes.
 9. The method of claim 8, wherein mapping the existing data comprises mapping the existing data from the memory array to the memory shapes.
 10. The method of claim 8, wherein mapping the existing data comprises mapping the existing data from a different memory array of the memory device to the memory shapes.
 11. A system, comprising: a memory system comprising a plurality of memory devices; and a host coupled to the memory system and configured to allocate contiguous columns of memory cells and contiguous rows of memory cells of respective single physical memory components of the plurality of memory devices according to: a first user definition specifying a major dimension of a memory shape by which data is written to the memory shape; and a second user definition specifying a plurality of the memory shape, wherein the memory system is configured to: responsive to the first user definition specifying a vertical major dimension: store only a first data element in a first one of the contiguous columns of memory cells of the respective single physical memory components; and store only a second data element in a second one of the contiguous columns of memory cells that is adjacent to the first one of the contiguous columns of memory cells; and responsive to the first user definition specifying a horizontal major dimension: store only the first data element in a first one of the contiguous rows of memory cells of the respective single physical memory components; and store only the second data element in a second one of the contiguous rows of memory cells that is adjacent to the first one of the contiguous rows of memory cells.
 12. The system of claim 11, wherein each respective single physical memory component comprises a respective memory bank of the plurality of memory devices.
 13. The system of claim 11, wherein the host is further configured to allocate the contiguous columns of memory cells and the contiguous rows of memory cells of the respective single physical memory components such that each memory shape comprises memory cells coupled to common access lines.
 14. The system of claim 11, wherein the memory system further comprises sensing circuitry configured to perform an operation on the first data element or the second data element.
 15. The system of claim 14, wherein the sensing circuitry is further configured to: perform the operation on a third data element of a first one of the memory shapes; and perform the operation on a fourth data element of a second one of the memory shapes.
 16. The system of claim 14, wherein the sensing circuitry is further configured to: perform the operation on the respective first data elements of a subset of the memory shapes; and perform the operation on the respective second data elements of the subset of the memory shapes.
 17. The system of claim 14, wherein the sensing circuitry is further configured to perform the operation on respective data elements of a subset of the memory shapes concurrently.
 18. The system of claim 14, wherein the host is further configured to address each memory shape individually.
 19. The system of claim 11, wherein the host is further configured to address each memory shape with a vector style address.
 20. The system of claim 11, wherein the host further comprises a memory allocation application program interface (API) configured to receive the first and second user definitions. 